Ultralow dark currentp‐type strained‐layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance forT≤100 K

1994 ◽  
Vol 64 (6) ◽  
pp. 727-729 ◽  
Author(s):  
Y. H. Wang ◽  
Sheng S. Li ◽  
J. Chu ◽  
Pin Ho
1996 ◽  
Vol 68 (20) ◽  
pp. 2846-2848 ◽  
Author(s):  
T. R. Schimert ◽  
S. L. Barnes ◽  
A. J. Brouns ◽  
F. C. Case ◽  
P. Mitra ◽  
...  

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