infrared photodetector
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2022 ◽  
Vol 148 ◽  
pp. 107714
Author(s):  
Smiri Badreddine ◽  
R.S. Joshya ◽  
Demir Ilkay ◽  
Saidi Faouzi ◽  
Altuntas Ismail ◽  
...  

APL Photonics ◽  
2022 ◽  
Author(s):  
Min Gyu Kwon ◽  
Cihyun Kim ◽  
Kyoung Eun Chang ◽  
Tae Jin Yoo ◽  
So-Young Kim ◽  
...  

2022 ◽  
Vol 11 (1) ◽  
Author(s):  
Peisong Wu ◽  
Lei Ye ◽  
Lei Tong ◽  
Peng Wang ◽  
Yang Wang ◽  
...  

AbstractWith the increasing demand for multispectral information acquisition, infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention. However, the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems. Here, we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths. This photodetector consists of vertically stacked back-to-back diode structures. The two-color signals can be effectively separated to achieve ultralow crosstalk of ~0.05% by controlling the built-in electric field depending on the intermediate layer, which acts as an electron-collecting layer and hole-blocking barrier. The impressive performance of the two-color photodetector is verified by the specific detectivity (D*) of 6.4 × 109 cm Hz1/2 W−1 at 3.5 μm and room temperature, as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection.


2021 ◽  
Vol 12 (1) ◽  
pp. 92
Author(s):  
Sung-Tae Kim ◽  
Ji-Seon Yoo ◽  
Min-Woo Lee ◽  
Ji-Won Jung ◽  
Jae-Hyung Jang

Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 nm. By synthesizing a CuInSe2 compound on a glass substrate, photodetectors that can detect optical wavelengths longer than 1100 nm have been realized in this study. The bandgap energies of the CuInSe2 thin films were tuned by varying the Cu/In ratio from 1.02 to 0.87. The longest cut-off wavelength (1309 nm) was obtained from a CuInSe2 thin film having a Cu/In ratio of 0.87. The responsivity of the photodiode was measured under the illumination of a 1064 nm laser light. The photo responses exhibited linear response up to 2.33 mW optical illumination and a responsivity of 0.60 A/W at −0.4 V.


2021 ◽  
pp. 118704
Author(s):  
Lijun Yu ◽  
Benhai Wang ◽  
Haobin Han ◽  
Chaoqing Dai ◽  
Wei Liu ◽  
...  

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