A normal incidence two‐colorp‐type compressive strained‐layer In0.4Ga0.6As/GaAs quantum well infrared photodetector for 3–5 μm and 8–12 μm detection

Journal of Applied Physics ◽

10.1063/1.358352 ◽

1994 ◽

Vol 76 (10) ◽

pp. 6009-6011 ◽

Author(s):

Y. H. Wang ◽

J. Chu ◽

Sheng S. Li ◽

Pin Ho

Keyword(s):

Quantum Well ◽

Normal Incidence ◽

Infrared Photodetector ◽

Strained Layer ◽

Quantum Well Infrared Photodetector

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Normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well infrared photodetector with background limited performance at 77 K

10.1117/12.179692 ◽

1994 ◽

Author(s):

Sheng S. Li ◽

Yanhua H. Wang ◽

Jerome T. Chu ◽

Pin Ho

Keyword(s):

Quantum Well ◽

Normal Incidence ◽

Infrared Photodetector ◽

Strained Layer ◽

Quantum Well Infrared Photodetector ◽

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Ultralow dark currentp‐type strained‐layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance forT≤100 K

Applied Physics Letters ◽

10.1063/1.111964 ◽

1994 ◽

Vol 64 (6) ◽

pp. 727-729 ◽

Author(s):

Y. H. Wang ◽

Sheng S. Li ◽

J. Chu ◽

Pin Ho

Keyword(s):

Quantum Well ◽

Infrared Photodetector ◽

Strained Layer ◽

Quantum Well Infrared Photodetector

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A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength

Applied Physics Letters ◽

10.1063/1.122267 ◽

1998 ◽

Vol 73 (12) ◽

pp. 1664-1666

Author(s):

J. Chu ◽

Sheng S. Li ◽

A. Singh ◽

P. Ho

Keyword(s):

Quantum Well ◽

Type Strain ◽

Normal Incidence ◽

Peak Detection ◽

Infrared Photodetector ◽

Quantum Well Infrared Photodetector ◽

Strain Layer ◽

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Normal incidence n-type GaAs/Al Ga1−As quantum well infrared photodetector

Thin Solid Films ◽

10.1016/s0040-6090(97)00589-0 ◽

1998 ◽

Vol 312 (1-2) ◽

pp. 265-267

Author(s):

G.L. Luo ◽

Q. Huang ◽

J.M. Zhou

Keyword(s):

Quantum Well ◽

Normal Incidence ◽

Infrared Photodetector ◽

Quantum Well Infrared Photodetector

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Noise characterization and device parameter extraction of ap‐type strained layer quantum‐well infrared photodetector

Journal of Applied Physics ◽

10.1063/1.360989 ◽

1996 ◽

Vol 79 (3) ◽

pp. 1486-1490 ◽

Author(s):

Daniel C. Wang ◽

Gijs Bosman ◽

Sheng S. Li

Keyword(s):

Quantum Well ◽

Parameter Extraction ◽

Infrared Photodetector ◽

Strained Layer ◽

Quantum Well Infrared Photodetector ◽

Device Parameter ◽

Noise Characterization

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Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate

Infrared Physics & Technology ◽

10.1016/j.infrared.2006.10.025 ◽

2007 ◽

Vol 50 (2-3) ◽

pp. 119-123 ◽

Author(s):

T. Mei ◽

H. Li ◽

G. Karunasiri ◽

W.J. Fan ◽

D.H. Zhang ◽

...

Keyword(s):

Quantum Well ◽

Normal Incidence ◽

Infrared Photodetector ◽

Quantum Well Infrared Photodetector ◽

Silicon Doped ◽

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A normal‐incidence type‐II quantum‐well infrared photodetector using an indirect AlAs/Al0.5Ga0.5As system grown on (110) GaAs for mid‐ and long‐wavelength multicolor detection

Journal of Applied Physics ◽

10.1063/1.354896 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1382-1387 ◽

Author(s):

Y. H. Wang ◽

Sheng S. Li ◽

Pin Ho ◽

M. O. Manasreh

Keyword(s):

Quantum Well ◽

Normal Incidence ◽

Type Ii ◽

Infrared Photodetector ◽

Long Wavelength ◽

Quantum Well Infrared Photodetector

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Growth of AlGaAs and AlGaAs/GaAs heterostructures on misoriented (110)GaAs and a normal incidence type-II AlAs/AlGaAs quantum well infrared photodetector

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586744 ◽

1993 ◽

Vol 11 (3) ◽

pp. 935 ◽

Author(s):

Pin Ho

Keyword(s):

Quantum Well ◽

Normal Incidence ◽

Type Ii ◽

Infrared Photodetector ◽

Quantum Well Infrared Photodetector

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A new compressively strained‐layer p‐type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm

Applied Physics Letters ◽

10.1063/1.117384 ◽

1996 ◽

Vol 69 (9) ◽

pp. 1258-1260 ◽

Author(s):

J. Chu ◽

Sheng S. Li ◽

Pin Ho

Keyword(s):

Quantum Well ◽

Infrared Photodetector ◽

Strained Layer ◽

Quantum Well Infrared Photodetector ◽

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Normal-incidence quantum well infrared photodetector without grating coupler

Acta Physica Sinica (Overseas Edition) ◽

10.1088/1004-423x/4/11/002 ◽

1995 ◽

Vol 4 (11) ◽

pp. 806-809

Author(s):

Wang Wen-xin ◽

Hu Qiang ◽

Huang Qi ◽

Zhou Jun-ming ◽

Cui Da-fu ◽

...

Keyword(s):

Quantum Well ◽

Normal Incidence ◽

Grating Coupler ◽

Infrared Photodetector ◽

Quantum Well Infrared Photodetector

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