A new compressively strained‐layer p‐type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm
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1994 ◽
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2008 ◽
Vol 23
(3)
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pp. 035011
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2007 ◽
Vol 50
(2-3)
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pp. 119-123
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