Influence of DX centers in the AlxGa1−xAs barrier on the low‐temperature density and mobility of the two‐dimensional electron gas in GaAs/AlGaAs modulation‐doped heterostructure

1995 ◽  
Vol 66 (11) ◽  
pp. 1406-1408 ◽  
Author(s):  
Bin Yang ◽  
Zhan‐guo Wang ◽  
Yong‐hai Cheng ◽  
Ji‐ben Liang ◽  
Lan‐ying Lin ◽  
...  
2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.


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