Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Ultrasonic Vibrations ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dx Centers ◽  
Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

Characterization of a two-dimensional electron gas in GaAs–AlGaAs by surface acoustic waves

1991 ◽  
Vol 69 (3-4) ◽  
pp. 461-464 ◽  
Author(s):  
F. Guillion ◽  
A. Sachrajda ◽  
M. D'Iorio ◽  
R. Boulet ◽  
P. Coleridge
Keyword(s):  
Acoustic Waves ◽  
Carrier Density ◽  
Wave Attenuation ◽  
Surface Acoustic Waves ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

We report simultaneous magnetotransport and surface acoustic-wave attenuation measurements performed at 1.25 K on a two-dimensional electron gas (2-DEG) GaAs–AlGaAs heterojunction sample. The carrier density was varied by means of the persistent photoconductivity effect. A comparison of the conductivity deduced from the two types of measurements is used to obtain information about the homogeneity of the 2-DEG sample. For this specific sample a simple model shows that there exists a 20% variation in the carrier density at some intermediate carrier densities, while prior to illumination and after saturation with light the spread in carrier density in the sample was only a few percent.

An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

2004 ◽  
Vol 95 (12) ◽  
pp. 7982-7989 ◽  
Author(s):  
S. Elhamri ◽  
R. Berney ◽  
W. C. Mitchel ◽  
W. D. Mitchell ◽  
J. C. Roberts ◽  
...  
Keyword(s):  
Electron Gas ◽  
Electrical Characterization ◽  
Silicon Substrates ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Two-dimensional electron gas and persistent photoconductivity inAlxGa1−xN/GaNheterostructures

1998 ◽  
Vol 58 (20) ◽  
pp. 13793-13798 ◽  
Author(s):  
T. Y. Lin ◽  
H. M. Chen ◽  
M. S. Tsai ◽  
Y. F. Chen ◽  
F. F. Fang ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Ion Damage Studies in GaAs-Algaas Ultra-Narrow Wires

1988 ◽  
Vol 144 ◽  
Author(s):  
T. L. Cheeks ◽  
M. L. Roukes ◽  
A. Scherer ◽  
B. P. Van Der Gaag ◽  
H. G. Craighead
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Low Energy ◽  
Charge Carrier Density ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electrical Measurements ◽  
Two Dimensional Electron Gas ◽  
Ion Damage ◽  
Dimensional Electron Gas

ABSTRACTLow energy ion damage effects have been investigated in GaAs-A1GaAs two dimensional electron gas (2DEG) materials. The effect of ion mass (He, Ar, Xe) and adsorbed C12 on the charge carrier density and mobility has been studied for ion bombarded 2DEG systems. The 2DEG mobility was significantly reduced by ion damage with the effect becoming more dramatic with smaller ion mass. For the same treatment, the two dimensional carrier density was relatively unaffected. The results of He ion exposure showed serious degradation of the 2DEG with moderate ion dose. Electrical measurements were performed to determine the conducting widths of narrow patterned wires. For the same structural widths (mask width) He defined wires showed smaller electrical widths than Ar milling in the presence of chlorine. Serious limitations to patterning small structures may be imposed using beam processes that include He or other light mass species.

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