Ultrafast carrier trapping in high energy ion implanted gallium arsenide

1996 ◽  
Vol 68 (16) ◽  
pp. 2225-2227 ◽  
Author(s):  
C. Jagadish ◽  
H. H. Tan ◽  
A. Krotkus ◽  
S. Marcinkevicius ◽  
K. P. Korona ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
High Energy ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

scholarly journals Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs

1996 ◽  
Vol 90 (4) ◽  
pp. 851-854 ◽  
Author(s):  
K.P. Korona ◽  
J. Jasiński ◽  
A. Kurpiewski ◽  
M. Kamińska ◽  
C. Jagadish ◽  
...  
Keyword(s):  
High Resistivity ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

2003 ◽  
Vol 94 (2) ◽  
pp. 1074-1078 ◽  
Author(s):  
C. Carmody ◽  
H. H. Tan ◽  
C. Jagadish ◽  
A. Gaarder ◽  
S. Marcinkevičius
Keyword(s):  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

Ion‐implanted nitrogen in gallium arsenide

1973 ◽  
Vol 44 (10) ◽  
pp. 4393-4399 ◽  
Author(s):  
A. H. Kachare ◽  
W. G. Spitzer ◽  
A. Kahan ◽  
F. K. Euler ◽  
T. A. Whatley
Keyword(s):  
Gallium Arsenide ◽  
Ion Implanted

Luminescence Centers in High-Energy Ion-Implanted Silicon

1997 ◽  
Vol 258-263 ◽  
pp. 587-592 ◽  
Author(s):  
Koichi Terashima ◽  
Taeko Ikarashi ◽  
Masahito Watanabe ◽  
Tomohisa Kitano
Keyword(s):  
High Energy ◽  
Luminescence Centers ◽  
Ion Implanted
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