Luminescence Centers in High-Energy Ion-Implanted Silicon

Materials Science Forum ◽

10.4028/www.scientific.net/msf.258-263.587 ◽

1997 ◽

Vol 258-263 ◽

pp. 587-592 ◽

Author(s):

Koichi Terashima ◽

Taeko Ikarashi ◽

Masahito Watanabe ◽

Tomohisa Kitano

Keyword(s):

High Energy ◽

Luminescence Centers ◽

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Ultrafast carrier trapping in high energy ion implanted gallium arsenide

Applied Physics Letters ◽

10.1063/1.115866 ◽

1996 ◽

Vol 68 (16) ◽

pp. 2225-2227 ◽

Author(s):

C. Jagadish ◽

H. H. Tan ◽

A. Krotkus ◽

S. Marcinkevicius ◽

K. P. Korona ◽

...

Keyword(s):

Gallium Arsenide ◽

High Energy ◽

Carrier Trapping ◽

Ultrafast Carrier ◽

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Terahertz continuous-wave large-area traveling-wave photomixers on high-energy low-dose ion-implanted GaAs

Applied Physics Letters ◽

10.1063/1.2722235 ◽

2007 ◽

Vol 90 (17) ◽

pp. 171109 ◽

Author(s):

E. A. Michael ◽

I. Cámara Mayorga ◽

R. Güsten ◽

A. Dewald ◽

R. Schieder

Keyword(s):

Traveling Wave ◽

Low Dose ◽

Continuous Wave ◽

High Energy ◽

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Investigation of defects in high-energy heavy ion implanted GaAs

Applied Radiation and Isotopes ◽

10.1016/s0969-8043(99)00141-4 ◽

2000 ◽

Vol 52 (1) ◽

pp. 39-45 ◽

Author(s):

Z.Q. Chen ◽

Z. Wang ◽

S.J. Wang ◽

M.D. Hou

Keyword(s):

Heavy Ion ◽

High Energy ◽

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Indentation Fracture of High-Energy Ion Implanted Alpha-Alumina Single Crystals

Fracture of Engineering Materials and Structures ◽

10.1007/978-94-011-3650-1_52 ◽

1991 ◽

pp. 361-366 ◽

Author(s):

R. Nowak ◽

Y. Horino ◽

K. Ueno ◽

M. Kinoshita ◽

W. Ensinger ◽

...

Keyword(s):

Single Crystals ◽

High Energy ◽

Indentation Fracture ◽

Alpha Alumina ◽

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Damage profile on high energy ion implanted GaP

phys stat sol (a) ◽

10.1002/pssa.2210970137 ◽

1986 ◽

Vol 97 (1) ◽

pp. K15-K19 ◽

Author(s):

C. Ascheron ◽

G. Otto ◽

R. Flagmeyer ◽

H.-E. Zschau ◽

V. N. Bugrov ◽

...

Keyword(s):

High Energy ◽

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Characterization of mechanical properties and microstructure of high-energy dual ion implanted metals

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(00)00655-8 ◽

2001 ◽

Vol 175-177 ◽

pp. 647-651 ◽

Author(s):

S Taniguchi ◽

A Kitahara ◽

S Wakayama ◽

E Eriguchi ◽

N Suyama

Keyword(s):

Mechanical Properties ◽

High Energy ◽

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Depth profiling of ion-implanted samples by high-energy electron scattering

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab66d8 ◽

2020 ◽

Vol 53 (13) ◽

pp. 135304 ◽

Author(s):

H Trombini ◽

M Vos ◽

R G Elliman ◽

P L Grande

Keyword(s):

Electron Scattering ◽

Depth Profiling ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

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Homogeneous Amorphization in High-Energy Ion Implanted Si

Physical Review Letters ◽

10.1103/physrevlett.78.2980 ◽

1997 ◽

Vol 78 (15) ◽

pp. 2980-2982 ◽

Author(s):

T. Motooka ◽

S. Harada ◽

M. Ishimaru

Keyword(s):

High Energy ◽

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Ultrafast carrier trapping in high energy ion implanted indium phosphide

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242760 ◽

2005 ◽

Author(s):

C. Camody ◽

H. Boudinov ◽

H.H. Tan ◽

C. Jagadish ◽

L.V. Dao ◽

...

Keyword(s):

Indium Phosphide ◽

High Energy ◽

Carrier Trapping ◽

Ultrafast Carrier ◽

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Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

Applied Physics Letters ◽

10.1063/1.1601678 ◽

2003 ◽

Vol 83 (7) ◽

pp. 1367-1369 ◽

Author(s):

A. Kvit ◽

R. A. Yankov ◽

G. Duscher ◽

G. Rozgonyi ◽

J. M. Glasko

Keyword(s):

High Energy ◽

Metallic Impurity ◽

Epitaxial Silicon ◽

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