Erratum: “Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors” [Appl. Phys. Lett. 68, 1972 (1996)]

1997 ◽  
Vol 71 (4) ◽  
pp. 557-557
Author(s):  
R. P. Joshi ◽  
J. A. McAdoo
1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.


1992 ◽  
Vol 61 (7) ◽  
pp. 819-821 ◽  
Author(s):  
S. Y. Chou ◽  
Y. Liu ◽  
W. Khalil ◽  
T. Y. Hsiang ◽  
S. Alexandrou

2011 ◽  
Vol 99 (20) ◽  
pp. 203502 ◽  
Author(s):  
Marc Currie ◽  
Fabio Quaranta ◽  
Adriano Cola ◽  
Eric M. Gallo ◽  
Bahram Nabet

2002 ◽  
Vol 80 (21) ◽  
pp. 4054-4056 ◽  
Author(s):  
Kian-Giap Gan ◽  
Jin-Wei Shi ◽  
Yen-Hung Chen ◽  
Chi-Kuang Sun ◽  
Yi-Jen Chiu ◽  
...  

2012 ◽  
Vol 9 (7) ◽  
pp. 1693-1695
Author(s):  
Juozas Adamonis ◽  
Klemensas Bertulis ◽  
Andrius Bičiūnas ◽  
Ramūnas Adomavičius ◽  
Arūnas Krotkus

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