Ion energy-induced nanoclustering structure in a-C:H film for achieving robust superlubricity in vacuum

Hydrogenated amorphous carbon (a-C:H) films are capable of providing excellent superlubricating properties, which have great potential serving as self-lubricating protective layer for mechanical systems in extreme working conditions. However, it is still a huge challenge to develop a-C:H films capable of achieving robust superlubricity state in vacuum. The main obstacle derives from the lack of knowledge on the influencing mechanism of deposition parameters on the films bonding structure and its relation to their self-lubrication performance. Aiming at finding the optimized deposition energy and revealing its influencing mechanism on superlubricity, a series of highly-hydrogenated a-C:H films were synthesized with appropriate ion energy, and systematic tribological experiments and structural characterization were conducted. The results highlight the pivotal role of ion energy on film composition, nanoclustering structure, and bonding state, which determine mechanical properties of highly-hydrogenated a-C:H films and surface passivation ability and hence their superlubricity performance in vacuum. The optimized superlubricity performance with the lowest friction coefficient of 0.006 coupled with the lowest wear rate emerges when the carbon ion energy is just beyond the penetration threshold of subplantation. The combined growth process of surface chemisorption and subsurface implantation is the key for a-C:H films to acquire stiff nanoclustering network and high volume of hydrogen incorporation, which enables a robust near-frictionless sliding surface. These findings can provide a guidance towards a more effective manipulation of self-lubricating a-C:H films for space application.

Suppression of Halide Migration and Immobile Ionic Surface Passivation for Blue Perovskite Light-Emitting Diodes

Cs-based perovskite nanocrystals (PeNCs) have been considered to be superb emitters for perovskite light-emitting diodes (PeLEDs) due to their remarkable optoelectronic properties. Still, poor optical properties are mainly attributed to...

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation

Ge has been an alternative channel material for the performance enhancement of complementary metal–oxide–semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology. The gate structure plays a key role on the electrical property. In this paper, the property of Ge MOSFET with Al2O3/GeO x /Ge stack by ozone oxidation is reviewed. The GeO x passivation mechanism by ozone oxidation and band alignment of Al2O3/GeO x /Ge stack is described. In addition, the charge distribution in the gate stack and remote Coulomb scattering on carrier mobility is also presented. The surface passivation is mainly attributed to the high oxidation state of Ge. The energy band alignment is well explained by the gap state theory. The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility. These investigations help to provide an impressive understanding and a possible instructive method to improve the performance of Ge devices.

Role of additives and surface passivation on the performance of perovskite solar cells

Outstanding improvement in power conversion efficiency (PCE) over 25% in a very short period and promising research developments to reach the theoretical PCE limit of single junction solar cells, 33%, enables organic–inorganic perovskite solar cells (OIPSCs) to gain much attention in the scientific and industrial community. The simplicity of production of OIPSCs from precursor solution either on rigid or flexible substrates makes them even more attractive for low-cost roll-to-roll production processes. Though OIPSCs show as such higher PCE with simple solution processing methods, there are still unresolved issues, while attempts are made to commercialize these solar cells. Among the major problems is the instability of the photoactive layer of OIPSCs at the interface of the charge transport layers and /or electrodes during prolonged exposure to moisture, heat and radiation. To achieve matched PCE and stability, several techniques such as molecular and interfacial engineering of components in OIPSCs have been applied. Moreover, in recent times, engineering on additives, solvents, surface passivation, and structural tuning have been developed to reduce defects and large grain boundaries from the surface and/or interface of organic–inorganic perovskite films. Under this review, we have shown recently developed additives and passivation strategies, which are strongly focused to enhance PCE and long-term stability simultaneously.