Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement
Keyword(s):
Keyword(s):
2000 ◽
Vol 147
(6)
◽
pp. 407
◽
Keyword(s):
Keyword(s):
Keyword(s):
2000 ◽
Vol 3
(5-6)
◽
pp. 383-387
◽
2019 ◽
Vol 18
◽
pp. 1050-1056
◽
Keyword(s):
2019 ◽
Vol 11
(8)
◽
pp. 8291-8300
◽