Perovskite Light-Emitting Diodes Based on FAPb1− x Sn x Br3 Nanocrystals Synthesized at Room Temperature

2019 ◽  
Vol 18 ◽  
pp. 1050-1056 ◽  
Author(s):  
Rui Cai ◽  
Xiangwei Qu ◽  
Haochen Liu ◽  
Hongcheng Yang ◽  
Kai Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting

Room temperature thermo-electric pumping in mid-infrared light-emitting diodes

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Thermo Electric ◽  
Mid Infrared ◽  
Light Emitting

Room-temperature light-emitting diodes with Ge islands

2000 ◽  
Vol 3 (5-6) ◽  
pp. 383-387 ◽  
Author(s):  
L Vescan ◽  
O Chretien ◽  
T Stoica ◽  
E Mateeva ◽  
A Mück
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting

Modulating room temperature spin injection into GaN towards the high-efficiency spin-light emitting diodes

2020 ◽  
Vol 13 (4) ◽  
pp. 043006 ◽  
Author(s):  
Anke Song ◽  
Jiajun Chen ◽  
Jinshen Lan ◽  
Deyi Fu ◽  
Jiangpeng Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
Light Emitting

Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

2004 ◽  
Vol 84 (17) ◽  
pp. 3394-3396 ◽  
Author(s):  
A. J. Fischer ◽  
A. A. Allerman ◽  
M. H. Crawford ◽  
K. H. A. Bogart ◽  
S. R. Lee ◽  
...  
Keyword(s):  
Direct Current ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Operation

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

1999 ◽  
Vol 74 (16) ◽  
pp. 2384-2386 ◽  
Author(s):  
M. J. Pullin ◽  
H. R. Hardaway ◽  
J. D. Heber ◽  
C. C. Phillips ◽  
W. T. Yuen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Strained Layer ◽  
Carrier Confinement ◽  
Strained Layer Superlattice

scholarly journals Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

2005 ◽  
Vol 97 (7) ◽  
pp. 073512 ◽  
Author(s):  
M. Milosavljević ◽  
G. Shao ◽  
M. A. Lourenco ◽  
R. M. Gwilliam ◽  
K. P. Homewood
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Dislocation Loops ◽  
Light Emitting ◽  
Induced Dislocation
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