Resonant Raman scattering in self-organized InAs/GaAs quantum dots

2000 ◽  
Vol 77 (23) ◽  
pp. 3746-3748 ◽  
Author(s):  
R. Heitz ◽  
H. Born ◽  
A. Hoffmann ◽  
D. Bimberg ◽  
I. Mukhametzhanov ◽  
...  
2007 ◽  
Vol 1053 ◽  
Author(s):  
Stefan Werner ◽  
Patrick Zimmer ◽  
André Strittmatter ◽  
Axel Hoffmann

ABSTRACTThe carrier-phonon interaction in self-organized In(Ga)As/GaAs quantum dots is investigated under resonant excitation of the ground-state transition. Different phonon-coupled processes are observed. The distinction between Raman scattering and hot-luminescence process has been resolved by time-dependent photoluminescence measurements. The quantum dot LO (33.8 meV) as well as an interface (36.5 meV) phonon mode is observed by resonant Raman scattering. For the QD LO phonon mode, a very short radiative lifetime of 10 ps was found.


2004 ◽  
Vol 21 (2-4) ◽  
pp. 312-316 ◽  
Author(s):  
D Bougeard ◽  
P.H Tan ◽  
M Sabathil ◽  
P Vogl ◽  
G Abstreiter ◽  
...  

2007 ◽  
Vol 4 (7) ◽  
pp. 2379-2382 ◽  
Author(s):  
A. Cros ◽  
J. A. Budagosky ◽  
N. Garro ◽  
A. Cantarero ◽  
J. Coraux ◽  
...  

1999 ◽  
Vol 59 (15) ◽  
pp. 10240-10245 ◽  
Author(s):  
C. Steinebach ◽  
C. Schüller ◽  
D. Heitmann

1999 ◽  
Vol 60 (24) ◽  
pp. 16747-16757 ◽  
Author(s):  
E. Menéndez-Proupin ◽  
C. Trallero-Giner ◽  
S. E. Ulloa

2014 ◽  
Vol 40 (11) ◽  
pp. 1035-1037 ◽  
Author(s):  
F. B. Bairamov ◽  
E. D. Poloskin ◽  
A. A. Kornev ◽  
A. L. Chernev ◽  
V. V. Toporov ◽  
...  

ACS Nano ◽  
2011 ◽  
Vol 5 (7) ◽  
pp. 5945-5956 ◽  
Author(s):  
Barbara Fazio ◽  
Cristiano D’Andrea ◽  
Francesco Bonaccorso ◽  
Alessia Irrera ◽  
Giuseppe Calogero ◽  
...  

2012 ◽  
Vol 107 (2) ◽  
pp. 275-278 ◽  
Author(s):  
A. G. Milekhin ◽  
N. A. Yeryukov ◽  
L. L. Sveshnikova ◽  
T. A. Duda ◽  
C. Himcinschi ◽  
...  

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