Dependence of Bond Order and of Bond Energy Upon Bond Length

1947 ◽  
Vol 15 (5) ◽  
pp. 305-310 ◽  
Author(s):  
Walter Gordy
Keyword(s):  
2018 ◽  
Vol 72 (4) ◽  
pp. 598-603 ◽  
Author(s):  
XueXian Yang ◽  
Yonghui Liu ◽  
Xin Juan Liu ◽  
Jin Zhang Peng ◽  
Heping Zhao ◽  
...  

We formulated the composition and temperature dependence of the Si and Si1– xGe x Raman shift from the perspectives of bond order–length–strength correlation and local bond average approach. It is verified that the Raman shift Δω varies in the form of Δω ∝ zE1/2/ d, with inclusion of bond length d and energy E changing with temperature and composition. Numerical reproduction of the thermally induced Si1– xGe x phonon softening indicates that bond thermal expansion and energy loss dictate the frequency redshift, which resulted in quantitative information on the bond energy and the reference frequencies from which the Raman shifts proceed. Observations not only gain deeper insight into the mechanism of the Raman shift but also demonstrate the revealing power of Raman technique for the bonding thermodynamics.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Xiaoliang Chen ◽  
Xiaoguo Liu ◽  
Guangbao Yao ◽  
Qian Li ◽  
Renduo Liu ◽  
...  
Keyword(s):  

2019 ◽  
Vol 179 ◽  
pp. 406-413 ◽  
Author(s):  
Christian Oberdorfer ◽  
Wolfgang Windl
Keyword(s):  

1957 ◽  
Vol 30 (6) ◽  
pp. 638-647 ◽  
Author(s):  
Tosinobu Anno ◽  
Mitsuo Ito ◽  
Ryoichi Shimada ◽  
Akira Sado ◽  
Wataru Mizushima

1950 ◽  
Vol 18 (8) ◽  
pp. 1116-1117 ◽  
Author(s):  
Georgio Nebbia
Keyword(s):  

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