Guided-mode effects in quantum-well infrared photodetectors integrated with light-emitting diode

2005 ◽  
Vol 97 (12) ◽  
pp. 123105 ◽  
Author(s):  
E. Dupont ◽  
M. Byloos ◽  
T. Oogarah ◽  
I. Sproule ◽  
H. C. Liu
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Infrared Photodetectors ◽  
Light Emitting ◽  
Mode Effects ◽  
Quantum Well Infrared Photodetectors ◽  
Guided Mode

Corrugated Quantum Well Infrared Photodetectors and Arrays

1999 ◽  
Author(s):  
K. K. Choi ◽  
C. J. Chen ◽  
L. P. Rohkinson ◽  
N. C. Das ◽  
M. Jhabvala
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

Gain-length scaling in quantum dot/quantum well infrared photodetectors

2009 ◽  
Vol 95 (9) ◽  
pp. 093502 ◽  
Author(s):  
T. Yamanaka ◽  
B. Movaghar ◽  
S. Tsao ◽  
S. Kuboya ◽  
A. Myzaferi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Gain Length ◽  
Length Scaling

Simulation of optical coupling in quantum well infrared photodetectors

1999 ◽  
Author(s):  
Prafulla J. Masalkar ◽  
Hironori Nishino ◽  
Kousaku Yamamoto ◽  
Yoshihiro Miyamoto ◽  
Toshio Fujii
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Optical Coupling ◽  
Quantum Well Infrared Photodetectors

Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

1997 ◽  
Vol 70 (4) ◽  
pp. 414-416 ◽  
Author(s):  
M. Ershov ◽  
H. C. Liu ◽  
M. Buchanan ◽  
Z. R. Wasilewski ◽  
V. Ryzhii
Keyword(s):  
Quantum Well ◽  
Excitation Power ◽  
Infrared Photodetectors ◽  
High Excitation ◽  
Quantum Well Infrared Photodetectors

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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