OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

2021 ◽  
Vol 121 ◽  
pp. 105431
Author(s):  
Hayatun Najihah Hussin ◽  
Noor Azrina Talik ◽  
Mohd Nazri Abd Rahman ◽  
Mohd Raqif Mahat ◽  
Prabakaran Poopalan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Regime Transition ◽  
Light Emitting ◽  
Growth Regime ◽  
Multi Quantum Well

Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering

2020 ◽  
Vol 127 (8) ◽  
pp. 085706 ◽  
Author(s):  
Lili Han ◽  
Minglong Zhao ◽  
Xiansheng Tang ◽  
Wenxue Huo ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Luminescence Study ◽  
Multi Quantum Well

scholarly journals Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 295-299 ◽  
Author(s):  
D. Oriato ◽  
Alison B. Walker ◽  
W. N. Wang
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Energy Levels ◽  
Drift Diffusion Model ◽  
Light Emitting ◽  
Consistent Solution ◽  
Band Profile ◽  
Piezoelectric Field ◽  
Model Lattice ◽  
Multi Quantum Well

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode. A self-consistent solution of Poisson and Schrödinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

Electromigration-induced failure of GaN multi-quantum well light emitting diode

2000 ◽  
Vol 36 (10) ◽  
pp. 908 ◽  
Author(s):  
Hyunsoo Kim ◽  
Hyundoek Yang ◽  
Chul Huh ◽  
Sang-Woo Kim ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Multi Quantum Well
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