Visible photoluminescence from a nanocrystalline porous silicon structure fabricated by a plasma hydrogenation and annealing method

2007 ◽  
Vol 101 (4) ◽  
pp. 044309 ◽  
Author(s):  
Y. Abdi ◽  
M. Jamei ◽  
P. Hashemi ◽  
S. Mohajerzadeh ◽  
M. D. Robertson ◽  
...  
1992 ◽  
Vol 31 (Part 2, No. 3A) ◽  
pp. L207-L209 ◽  
Author(s):  
Tomoyoshi Motohiro ◽  
Tetsu Kachi ◽  
Fusayoshi Miura ◽  
Yasuhiko Takeda ◽  
Shi-aki Hyodo ◽  
...  

1994 ◽  
Vol 33 (Part 2, No. 7A) ◽  
pp. L941-L944 ◽  
Author(s):  
Toshimichi Ito ◽  
Kenji Motoi ◽  
Osamu Arakaki ◽  
Akimitsu Hatta ◽  
Akio Hiraki

1992 ◽  
Vol 31 (Part 2, No. 11B) ◽  
pp. L1577-L1579 ◽  
Author(s):  
Hikaru Nishitani ◽  
Hiroyasu Nakata ◽  
Yasufumi Fujiwara ◽  
Tyuzi Ohyama

1995 ◽  
Vol 242 (1-2) ◽  
pp. 202-206 ◽  
Author(s):  
D.M. Soares ◽  
M.C. dos Santos ◽  
O. Teschke

2005 ◽  
Vol 86 (17) ◽  
pp. 171905 ◽  
Author(s):  
J. Sun ◽  
Y. W. Lu ◽  
X. W. Du ◽  
S. A. Kulinich

1997 ◽  
Vol 70 (2) ◽  
pp. 191-193 ◽  
Author(s):  
D. Petit ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
F. Devreux

1996 ◽  
Vol 452 ◽  
Author(s):  
A. J. Simons ◽  
T. I. Cox ◽  
A. Loni ◽  
P. D. J. Calcott ◽  
M. J. Uren ◽  
...  

AbstractThe effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.


2005 ◽  
Vol 40 (6) ◽  
pp. 1409-1412 ◽  
Author(s):  
M. M. Melnichenko ◽  
K. V. Svezhentsova ◽  
A. N. Shmyryeva

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