Anodically grown porous silicon structure: formation mechanisms

1995 ◽  
Vol 242 (1-2) ◽  
pp. 202-206 ◽  
Author(s):  
D.M. Soares ◽  
M.C. dos Santos ◽  
O. Teschke
2009 ◽  
Vol 1 (1) ◽  
pp. 124-130 ◽  
Author(s):  
A. E. Gorodetsky ◽  
I. L. Tarasova

RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 7990-7995 ◽  
Author(s):  
Shao-zhong Zeng ◽  
Xierong Zeng ◽  
Lin Huang ◽  
Hongliang Wu ◽  
Yuechao Yao ◽  
...  

Porous silicon with a tunable surface area was prepared from dense silicon monoxide and the mechanisms were studied in detail.


1997 ◽  
Vol 70 (2) ◽  
pp. 191-193 ◽  
Author(s):  
D. Petit ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
F. Devreux

1996 ◽  
Vol 452 ◽  
Author(s):  
A. J. Simons ◽  
T. I. Cox ◽  
A. Loni ◽  
P. D. J. Calcott ◽  
M. J. Uren ◽  
...  

AbstractThe effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.


2007 ◽  
Vol 101 (4) ◽  
pp. 044309 ◽  
Author(s):  
Y. Abdi ◽  
M. Jamei ◽  
P. Hashemi ◽  
S. Mohajerzadeh ◽  
M. D. Robertson ◽  
...  

Vacuum ◽  
2011 ◽  
Vol 86 (1) ◽  
pp. 111-118 ◽  
Author(s):  
V.I. Perekrestov ◽  
Yu.O. Kosminska ◽  
A.A. Mokrenko ◽  
I.N. Kononenko ◽  
A.S. Kornyushchenko

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