A Study of the Factors Which Determine the Modulation Speed of a Shallow PN Junction Porous Silicon Led

1996 ◽  
Vol 452 ◽  
Author(s):  
A. J. Simons ◽  
T. I. Cox ◽  
A. Loni ◽  
P. D. J. Calcott ◽  
M. J. Uren ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Operating Speed ◽  
Small Signal ◽  
Bulk Silicon ◽  
Silicon Structure ◽  
Electroluminescent Devices ◽  
Pn Junction ◽  
Photoluminescence Lifetime ◽  
Modulation Speed

AbstractThe effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.

scholarly journals Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
F. Severiano ◽  
G. García ◽  
L. Castañeda ◽  
J. M. Gracia-Jiménez ◽  
Heberto Gómez-Pozos ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Electrical Characterization ◽  
Ultrasonic Spray Pyrolysis ◽  
Hole Injection ◽  
Electroluminescent Devices ◽  
Ultrasonic Spray Pyrolysis Technique ◽  
Ultrasonic Spray

Electroluminescent devices (ELD) based on junctions of indium doped zinc oxide (ZnO:In) and porous silicon layers (PSL) are presented in this work. PSL with different thicknesses and photoluminescent emission, around 680 nm, were obtained by anodic etching. PSL were coated with a ZnO:In film which was obtained by ultrasonic spray pyrolysis technique. Once obtained, this structure was optically and electrically characterized. When the devices were electrically polarized they showed stable electroluminescence (EL) which was presented as dots scattered over the surface. These dots can be seen with the naked eye. The observed EL goes from the 410 to 1100 nm, which is formed by different emission bands. The EL emission in the visible region was around 400 to 750 nm, and the emission corresponding to the infrared part covers the 750 to 1150 nm. The electrical characterization was carried out by current-voltage curves(I-V)which show a rectifying behavior of the devices. Observed electroluminescent dots are associated with the electron-hole injection into quantized states in PS as well as the emission from the ZnO:In film.

Probing Optical Transitions in Porous Silicon by Reflectance Spectroscopy in the Near Infrared, Visible and UV

1994 ◽  
Vol 358 ◽  
Author(s):  
W. Theiβ ◽  
R. Arens-Fischer ◽  
M. Arntzen ◽  
M.G. Berger ◽  
S. Frohnhoff ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Dielectric Function ◽  
Near Infrared ◽  
Solid Phase ◽  
Pore Wall ◽  
Reflectance Spectroscopy ◽  
Wall Material ◽  
Bulk Silicon ◽  
Band Structure Calculations ◽  
Structure Calculations

ABSTRACTReflectance spectroscopy has been used to obtain the dielectric function of the solid phase of porous silicon. The method is based on a fit of a parameterized dielectric function model to measured spectra. A crucial step in the procedure is the 'dielectric averaging' of the microscopic dielectric function of the pore wall material to the macroscopic effective dielectric function which governs the optical properties.Results are given for heavily and moderately p-doped samples of various porosities. For the latter large differences to bulk silicon have been found. The obtained dielectric functions are compared to the results of band structure calculations taken from literature.

Anodically grown porous silicon structure: formation mechanisms

1995 ◽  
Vol 242 (1-2) ◽  
pp. 202-206 ◽  
Author(s):  
D.M. Soares ◽  
M.C. dos Santos ◽  
O. Teschke
Keyword(s):  
Porous Silicon ◽  
Structure Formation ◽  
Formation Mechanisms ◽  
Silicon Structure

scholarly journals Tracking the Fate of Porous Silicon Nanoparticles Delivering a Peptide Payload by Intrinsic Photoluminescence Lifetime

2018 ◽  
Vol 30 (35) ◽  
pp. 1802878 ◽  
Author(s):  
Yusung Jin ◽  
Dokyoung Kim ◽  
Hajung Roh ◽  
Sojeong Kim ◽  
Sazid Hussain ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanoparticles ◽  
Porous Silicon Nanoparticles ◽  
Photoluminescence Lifetime

Porous silicon structure studied by nuclear magnetic resonance

1997 ◽  
Vol 70 (2) ◽  
pp. 191-193 ◽  
Author(s):  
D. Petit ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
F. Devreux
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Silicon Structure ◽  
Nuclear Magnetic

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications

2011 ◽  
Vol 276 ◽  
pp. 3-19 ◽  
Author(s):  
Eugene Chubenko ◽  
Alexey Klyshko ◽  
Vitaly Bondarenko ◽  
Marco Balucani ◽  
Anatoly I. Belous ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Deposition ◽  
Electrochemical Process ◽  
Zno Films ◽  
Photovoltaic Devices ◽  
Bulk Silicon ◽  
High Quality ◽  
Hydrothermal Deposition ◽  
Electrochemically Deposited ◽  
Deposition Processes

In present work the investigation of the electrochemical and chemical hydrothermal deposition processes of ZnO on silicon is presented. The influence of the electrochemical process parameters on the characteristics and morphology of the ZnO deposits is analyzed. Electrochemical deposition from non aqueous DMSO solutions on porous silicon buffer layer is also discussed. The details of the chemical hydrothermal deposition from the nitrate bath of high-quality ZnO crystals on silicon substrate are presented. It was shown that morphology and size of synthesized ZnO crystals depends on the temperature of the deposition bath. Differences between photoluminescence of electrochemically deposited ZnO thin films and hydrothermally synthesized crystals are shown. Electrochemically deposited ZnO films demonstrate defect-caused luminescence and hydrothermally grown ZnO crystals shows intensive exciton luminescence band in UV region. Hydrothermal deposition of high-quality ZnO crystals on the surface of electrochemically deposited ZnO seed layer with porous silicon buffer improves photoluminescence properties of the structure which is useful for optoelectronics applications. Possible applications of ZnO as gas sensors and photovoltaic devices are considered. Aspects of ZnO electrochemical deposition on bulk silicon and silicon-on-isolator wafers for integration purposes are discussed.

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