Aluminium Induced Vapor Phase Stain Etch Method for Generating Porous Silicon Structure

2020 ◽  
Author(s):  
Joyita Biswas ◽  
Rajib Barui ◽  
Sayantani Das ◽  
Subhankar Bandyopadhyay
Keyword(s):  
Porous Silicon ◽  
Vapor Phase ◽  
Silicon Structure

Synthesis of porous silicon, nickel and carbon layers by vapor phase dealloying

2021 ◽  
pp. 127812
Author(s):  
Stefan Saager ◽  
Bert Scheffel ◽  
Thomas Modes ◽  
Olaf Zywitzki
Keyword(s):  
Porous Silicon ◽  
Vapor Phase

Low-pressure vapor-phase epitaxy of silicon on porous silicon

1988 ◽  
Vol 7 (3) ◽  
pp. 94-98 ◽  
Author(s):  
L. Vescan ◽  
G. Bomchil ◽  
A. Halimaoui ◽  
A. Perio ◽  
R. Herino
Keyword(s):  
Porous Silicon ◽  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy

Anodically grown porous silicon structure: formation mechanisms

1995 ◽  
Vol 242 (1-2) ◽  
pp. 202-206 ◽  
Author(s):  
D.M. Soares ◽  
M.C. dos Santos ◽  
O. Teschke
Keyword(s):  
Porous Silicon ◽  
Structure Formation ◽  
Formation Mechanisms ◽  
Silicon Structure

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

2018 ◽  
Vol 117 ◽  
pp. 293-297 ◽  
Author(s):  
Xian Wu ◽  
Peng Li ◽  
Renrong Liang ◽  
Lei Xiao ◽  
Jun Xu ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Porous silicon structure studied by nuclear magnetic resonance

1997 ◽  
Vol 70 (2) ◽  
pp. 191-193 ◽  
Author(s):  
D. Petit ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
F. Devreux
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Silicon Structure ◽  
Nuclear Magnetic

A Study of the Factors Which Determine the Modulation Speed of a Shallow PN Junction Porous Silicon Led

1996 ◽  
Vol 452 ◽  
Author(s):  
A. J. Simons ◽  
T. I. Cox ◽  
A. Loni ◽  
P. D. J. Calcott ◽  
M. J. Uren ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Operating Speed ◽  
Small Signal ◽  
Bulk Silicon ◽  
Silicon Structure ◽  
Electroluminescent Devices ◽  
Pn Junction ◽  
Photoluminescence Lifetime ◽  
Modulation Speed

AbstractThe effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.

scholarly journals Vapor-phase silanization of oxidized porous silicon for stabilizing composition and photoluminescence

2009 ◽  
Vol 105 (11) ◽  
pp. 114307 ◽  
Author(s):  
Hong-Liang Li ◽  
Yingchun Zhu ◽  
Dongsheng Xu ◽  
Yong Wan ◽  
Linhua Xia ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Vapor Phase ◽  
Oxidized Porous Silicon

A new method for luminescent porous silicon formation: reaction-induced vapor-phase stain etch

2005 ◽  
Vol 202 (8) ◽  
pp. 1539-1542 ◽  
Author(s):  
Elder A. de Vasconcelos ◽  
E. F. da Silva ◽  
B. E. C. A. dos Santos ◽  
W. M. de Azevedo ◽  
J. A. K. Freire
Keyword(s):  
Porous Silicon ◽  
Vapor Phase ◽  
New Method ◽  
Formation Reaction

Visible photoluminescence from a nanocrystalline porous silicon structure fabricated by a plasma hydrogenation and annealing method

2007 ◽  
Vol 101 (4) ◽  
pp. 044309 ◽  
Author(s):  
Y. Abdi ◽  
M. Jamei ◽  
P. Hashemi ◽  
S. Mohajerzadeh ◽  
M. D. Robertson ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Structure ◽  
Visible Photoluminescence ◽  
Annealing Method ◽  
Plasma Hydrogenation
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