The doped and non-doped white Organic light-emitting devices (OLEDs) were fabricated, using strong yellow emitting and hole-transporting ability of TPAHQZn. When the white OLED is a double-doped structure, greatly enhanced the efficiency of the device. The double-doped white device were fabricated as follows: ITO/2T-NATA (17 nm)/ CBP: 30% TPAHQZn: 8% Ir(ppy)3 (25 nm)/ NPBX (15 nm)/BCP(8nm)/TPBi: 10% Ir(ppy)3 (15nm)/Alq3 (20 nm)/LiF (1.3 nm)/Al. The double-doped white OLEDs were obtained with Commission International de L’Eclairage coordinates of (0.29,0.28) at 17 V, the maximum current efficiency increaed four times that double-doped white device of 4.12cd/A(8V) than non-doped of 1.03 cd/A (10V) .