9.6%- Efficient All-Inorganic Sb2(S,Se)3 Solar Cell with MnS Hole-Transporting Laye

Antimony selenosulfide, Sb2(S,Se)3, has emerged as a promising light-harvesting material for its high absorption coefficient, suitable bandgap, low-toxic and low-cost constituents. However, the poor stability and high cost of widely...

Exploration of conjugated π-bridge units in N,N-bis(4-methoxyphenyl)naphthalen-2-amine derivative-based hole transporting materials for perovskite solar cell applications: a DFT and experimental investigation

DFT and experimental investigation was used for the material design on the core engineering in N,N-bis(4-methoxyphenyl)naphthalen-2-amine derivative-based hole transporting materials for perovskite solar cell applications.

Dual functional inorganic CuSCN for efficient hole extraction and moisture sealing of MAPbI3 perovskite solar cells

Most high-performing organic-inorganic hybrid perovskite solar cells (PSC) are fabricated using expensive organic hole-transporting materials (HTM). The poor moisture- and thermal-stability of organic HTM is a significant factor contributing to...

Acridine Based Small Molecular Hole Transport Type Materials for Phosphorescent OLED Application

Two small molecular hole-transporting type materials, namely 4-(9,9-dimethylacridin-10(9H)-yl)-N-(4-(9,9-dimethylacridin-10(9H)-yl)phenyl)-N-phenylaniline (TPA-2ACR) and 10,10′-(9-phenyl-9H-carbazole-3,6-diyl)bis(9,9-dimethyl-9,10-dihydroacridine) (PhCAR-2ACR), were designed and synthesized using a single-step Buchwald–Hartwig amination between the dimethyl acridine and triphenylamine or carbazole moieties. Both materials showed high thermal decomposition temperatures of 402 and 422 °C at 5% weight reduction for PhCAR-2ACR and TPA-2ACR, respectively. TPA-2ACR as hole-transporting material exhibited excellent current, power, and external quantum efficiencies of 55.74 cd/A, 29.28 lm/W and 21.59%, respectively. The achieved device efficiencies are much better than that of the referenced similar, 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC)-based device (32.53 cd/A, 18.58 lm/W and 10.6%). Moreover, phenyl carbazole-based PhCAR-2ACR showed good device characteristics when applied for host material in phosphorescent OLEDs.

Novel Anthracene HTM Containing TIPs for Perovskite Solar Cells

Recently, perovskite solar cells have been in the spotlight due to several of their advantages. Among the components of PSCs, hole transporting materials (HTMs) re the most important factors for achieving high performance and a stable device. Here, we introduce a new D–π–D type hole transporting material incorporating Tips-anthracene as a π–conjugation part and dimethoxy-triphenylamine as a donor part (which can be easily synthesized using commercially available materials). Through the measurement of various optical properties, the new HTM not only has an appropriate energy level but also has excellent hole transport capability. The device with PEH-16 has a photovoltaic conversion efficiency of 17.1% under standard one sun illumination with negligible hysteresis, which can be compared to a device using Spiro_OMeTAD under the same conditions. Ambient stability for 1200 h shown that 98% of PEH-16 device from the initial PCE was retained, indicating that the devices had good long-term stability.

Theoretical study of highly efficient CH3NH3SnI3 based Perovskite solar cell with CuInS2 quantum dot

Simulation studies have been carried out for n-i-p perovskite solar cell (PSC) structure i.e. ITO/SnO2/CH3NH3PbI3/CuInS2/Au. We have considered this cell as our primary structure and is simulated using Solar Cell Capacitance Simulator (SCAPS-1D) software. Here, the CuInS2 quantum dot acts as an inorganic hole transporting layer. Further, the use of the CuInS2 quantum dot in PSCs has been explored by simulating twenty different cell structures. These perovskite solar cells are based on recently used absorber layers, i.e., MASnI3, FAPbI3, and (FAPbI3)0.97(MAPbBr1.5Cl1.5)0.03, and electron transporting layers, i.e., SnO2, TiO2, ZnO, C60, and IGZO. The performance of all structures has been optimized by varying the thickness of the absorber layers and ETLs. The cell structure, ITO/SnO2/CH3NH3SnI3/CuInS2/Au, has been found to exhibit highest power conversion efficiency of 21.79% as compared to other cells. Investigations have also been carried out to analyze the effect of defect density in the absorber layer and the interface of the cell structure. In addition, the cell performance has been ascertained by examining the impact of operating temperature, metal contact work function and that of resistance in series as well as in parallel. The simulation results of our primary cell structure are found to be in good agreement with the recent experimental study.