Direct Simulation Monte Carlo Simulations of Low Pressure Semiconductor Plasma Processing

Author(s):  
L. A. Gochberg ◽  
T. Ozawa ◽  
H. Deng ◽  
D. A. Levin ◽  
Takashi Abe
1998 ◽  
Vol 120 (2) ◽  
pp. 296-302 ◽  
Author(s):  
Masato Ikegawa ◽  
Jun’ichi Kobayashi ◽  
Morihisa Maruko

As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.


1999 ◽  
Author(s):  
Fang Yan ◽  
Bakhtier Farouk

Abstract High Knudsen (Kn) number flows are found in vacuum and micro-scale systems. Such flows are characterized by non-continuum behavior. For gases, the flows are usually in the slip or transition regimes. In this paper, the direct simulation Monte Carlo (DSMC) method has been applied to compute low pressure, high Kn flow fields in partially heated channels. Computations were carried out for nitrogen, argon, hydrogen, oxygen and noble gas mixtures. Variation of the Kn is obtained by reducing the pressure while keeping the channel width constant. Nonlinear pressure profiles along the channel centerline are observed. Heat transfer from the channel walls is also calculated and compared with the Graetz solution. The effects of varying pressure, inlet flow and gas transport properties (Kn, Reynolds number, Re and the Prandtl number, Pr respectively) on the wall heat transfer (Nu) were examined. A simplified correlation for predicting Nu¯ as a function of Pe¯ and Kn¯ is presented.


2002 ◽  
Vol 124 (4) ◽  
pp. 609-616 ◽  
Author(s):  
Fang Yan ◽  
Bakhtier Farouk

High Knudsen number (Kn) gas flows are found in vacuum and micro-scale systems. Such flows are usually in the slip or transition regimes. In this paper, the direct simulation Monte Carlo (DSMC) method has been applied to compute low pressure, high Kn flow fields in partially heated channels. Computations were carried out for nitrogen, argon, hydrogen, oxygen and noble gas mixtures. Variation of the Kn is obtained by reducing the pressure while keeping the channel width constant. Nonlinear pressure profiles along the channel centerline are observed. Heat transfer from the channel walls is also calculated and compared with the classical Graetz solution. The effects of varying pressure, inlet flow and gas transport properties (Kn, Reynolds number, Re and the Prandtl number, Pr respectively) on the wall heat transfer (Nusselt number, Nu) were examined. A simplified correlation for predicting Nu¯ as a function of the Peclet number, Pe¯ and Kn¯ is presented.


Sign in / Sign up

Export Citation Format

Share Document