Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
2019 ◽  
Vol 33 (02) ◽  
pp. 1950009
Author(s):  
Kai Zhong ◽  
Yuan Liu ◽  
Shu-Ting Cai ◽  
Xiao-Ming Xiong

The transfer and low frequency noise characteristics of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were measured in the temperature range of 230–430 K. The variation of threshold voltage, field effect mobility and sub-threshold swing with increasing temperatures were then extracted and analyzed. Moreover, the shifts of low frequency noise in the a-Si:H TFT under various temperatures are reported for the first time. The variation of flatband voltage noise power spectral density with temperature is also calculated and discussed.


1999 ◽  
Vol 46 (5) ◽  
pp. 968-974 ◽  
Author(s):  
C.T. Angelis ◽  
C.A. Dimitriadis ◽  
J. Brini ◽  
G. Kamarinos ◽  
V.K. Gueorguiev ◽  
...  

2007 ◽  
Vol 54 (5) ◽  
pp. 1076-1082 ◽  
Author(s):  
Argyrios T. Hatzopoulos ◽  
Nikolaos Arpatzanis ◽  
Dimitrios H. Tassis ◽  
Charalabos A. Dimitriadis ◽  
Maher Oudwan ◽  
...  

2000 ◽  
Vol 76 (22) ◽  
pp. 3268-3270 ◽  
Author(s):  
S. Giovannini ◽  
A. Bove ◽  
A. Valletta ◽  
L. Mariucci ◽  
A. Pecora ◽  
...  

1998 ◽  
Vol 83 (3) ◽  
pp. 1469-1475 ◽  
Author(s):  
C. A. Dimitriadis ◽  
J. Brini ◽  
G. Kamarinos ◽  
V. K. Gueorguiev ◽  
Tz. E. Ivanov

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