Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron‐beam‐induced current and its derivative: Determination of diffusion lengths in the low micron and submicron ranges

1985 ◽  
Vol 57 (6) ◽  
pp. 1978-1984 ◽  
Author(s):  
Keung L. Luke ◽  
Oldwig von Roos ◽  
Li‐jen Cheng
Keyword(s):  
Electron Beam ◽  
Diffusion Length ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Recombination Velocity ◽  
And Diffusion

Determination of surface recombination velocity at a grain boundary using electron‐beam‐induced current

1983 ◽  
Vol 54 (1) ◽  
pp. 169-173 ◽  
Author(s):  
D. E. Burk ◽  
S. Kanner ◽  
J. E. Muyshondt ◽  
D. S. Shaulis ◽  
P. E. Russell
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Recombination Velocity

Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

2015 ◽  
Vol 5 (1) ◽  
pp. 263-268 ◽  
Author(s):  
Lei Meng ◽  
Fa-Jun Ma ◽  
Johnson Wong ◽  
Bram Hoex ◽  
Charanjit S. Bhatia
Keyword(s):  
Electron Beam ◽  
Surface Recombination ◽  
Silicon Surfaces ◽  
Surface Recombination Velocity ◽  
Induced Current ◽  
Doped Silicon ◽  
Electron Beam Induced Current ◽  
Recombination Velocity
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