A transmission electron microscope investigation of the dose dependence of the microstructure of silicon‐on‐insulator structures formed by nitrogen implantation of silicon

1991 ◽  
Vol 69 (6) ◽  
pp. 3503-3511 ◽  
Author(s):  
C. D. Meekison ◽  
G. R. Booker ◽  
K. J. Reeson ◽  
P. L. F. Hemment ◽  
R. F. Peart ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Dose Dependence ◽  
Silicon On Insulator ◽  
Nitrogen Implantation ◽  
Electron Microscope Investigation ◽  
Microscope Investigation ◽  
Transmission Electron

Strain-Induced Recrystallization of Tial

1988 ◽  
Vol 133 ◽  
Author(s):  
C. R. Feng ◽  
D. J. Michel ◽  
C. R. Crowe
Keyword(s):  
Electron Microscope ◽  
Diffraction Analysis ◽  
Transmission Electron Microscope ◽  
Titanium Aluminide ◽  
Electron Microscope Investigation ◽  
Microscope Investigation ◽  
Transmission Electron ◽  
Submicron Scale

ABSTRACTTransmission electron microscope investigation of extruded and rolled XD™ titanium aluminide sheet has shown the development of recrystallized TiAl regions adjacent to grains which exhibit submicron scale TiAl twins. Detailed diffraction analysis confirmed that the TiAl twins were separated by a layer of Ti3Al. This is consistent with previous observations of the microstructure of extruded XD™ titanium aluminide. In the extruded material, however, the scale of the twins was larger, but the extent of the recrystallized region was smaller. The evidence suggests that the recrystallization of the TiAl regions may result from the impingement of twins from adjacent grains.

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