The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained
quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N
composition in the quantum well and a thicker well give longer emitting wavelength. The result also
shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing.
And, the optical gain spectra with different carrier concentrations will be obtained.
