Lattice position of Si in GaAs determined by x‐ray standing wave measurements

1993 ◽  
Vol 73 (12) ◽  
pp. 8161-8168
Author(s):  
A. Shih ◽  
P. L. Cowan ◽  
S. Southworth ◽  
L. Fotiadis ◽  
C. Hor ◽  
...  
Nanoscale ◽  
2018 ◽  
Vol 10 (5) ◽  
pp. 2226-2230 ◽  
Author(s):  
Matthias Meier ◽  
Zdeněk Jakub ◽  
Jan Balajka ◽  
Jan Hulva ◽  
Roland Bliem ◽  
...  

Benchmarking DFT calculations against precise normal incidence X-ray standing wave measurements.


1997 ◽  
Vol 19 (2-4) ◽  
pp. 617-624 ◽  
Author(s):  
I. A. Vartanyants ◽  
J. Zegenhagen

1995 ◽  
Vol 66 (2) ◽  
pp. 1522-1524 ◽  
Author(s):  
T. Gog ◽  
A. Hille ◽  
D. Bahr ◽  
G. Materlik

1997 ◽  
Vol 19 (2-4) ◽  
pp. 403-410 ◽  
Author(s):  
U. Beck ◽  
P. Yang ◽  
T. H. Metzger ◽  
J. Peisl ◽  
J. Falta ◽  
...  

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