Simultaneous measurement of pole figure and residual stress for polycrystalline thin films: ω–φ′ compensated grazing-incidence diffraction in side-inclination mode

A new grazing-incidence diffraction (GID) measurement geometry between in plane and out of plane is proposed. It is improved from the previous ω–φ compensated GID in side-inclination mode for measurement of residual stress in polycrystalline thin films [Wang & van Riessen (2017). Powder Diffr. 32, S9–S15]. Instead of keeping a constant azimuthal direction of the incident beam on the thin film sample, the current proposed variation maintains a constant azimuthal direction of the scattering vector projection on the thin film sample. The variation is named `ω–φ′ compensated GID in side-inclination mode' and enables d-spacing measurements along the same azimuthal direction. An Excel spreadsheet is included for readers to plan the measurement and to calculate the residual stress for the planned sample azimuthal direction. Anisotropic residual stresses of a polycrystalline NiFe thin film on an Si 001 substrate are measured by combining this method with phi rotations. Highly automated data analysis templates are developed using DIFFRAC.TOPAS v7 launch mode to calculate residual stress for all planned azimuthal directions sequentially. A pole figure file in simple text format is also generated from the same data set using DIFFRAC.TOPAS v7 launch mode, and can be directly imported into DIFFRAC.TEXTURE v4.1 for further texture analysis. Corrections for the incident-beam refraction have been implemented in both data analysis models.

Studies on the Characteristics and the Effect of Thickness on the Band Gap Energies of Al2O3 Thin Films Prepared by PLD

Pulsed laser deposition (PLD) method has the advantages of high quality mirror finish, good densification and uniform thickness. In this work, Al2O3 thin films with different thicknesses were fabricated via the PLD method. The characteristics of the thin film samples were investigated using Grazing Incidence Diffraction (GID) technique and Field Emission Scanning Electron Microscope (FESEM). For the band gap studies, measurements were done using a UV-Vis NIR spectrophotometer. The deposition was done in the presence of oxygen gas with partial pressure of 2.66 Pa. FESEM images showed high quality, smooth and dense films obtained using the PLD method. The Al2O3 thin films have thicknesses of between 71.2 nm to 176 nm. The band gap energies obtained were in the range of 6.29 eV to 6.49 eV. It was observed that the band gap of the thin films increases as the thickness decreases due to the defects in the films.

Synthesis of CdS nanocrystals in polymeric films studied by in-situ GID and GISAXS

ABSTRACTIn this work, we describe the synthesis of CdS nanocrystals in thin polymeric films by in-situ Grazing Incidence Diffraction (GID) and Grazing Incidence Small Angle Scattering (GISAXS). The 2D GISAXS patterns indicate how the precursor structure is altered as the temperature is varied from 25°C to 300°C. At 150°C, the CdS nanocrystals start to arrange themselves in a hexagonal lattice with a lattice parameter of 27 Å. The diffraction intensity from the hexagonal lattice reaches a maximum at 170°C and decreases steadily upon further heating above 220°C indicating loss of symmetry. Correspondingly, the GID scans at 170°C show strong crystalline peaks from cubic CdS nanocrystals that are about 2 nm size. The results indicate that a temperature of 170°C is sufficient to synthesize CdS nanocrystals without degradation of the polymer matrix (Topas) in thin films (about 30nm).