Determination of silicon point defect parameters and reaction barrier energies from gold diffusion experiments

1995 ◽  
Vol 77 (3) ◽  
pp. 1320-1322 ◽  
Author(s):  
K. Ghaderi ◽  
G. Hobler ◽  
M. Budil ◽  
L. Mader ◽  
H. J. Schulze

Author(s):  
D. M. Sedrakian ◽  
D. A. Badalyan ◽  
L. R. Sedrakyan
Keyword(s):  


2005 ◽  
Vol 12 (04) ◽  
pp. 493-498
Author(s):  
EMAD A. BADAWI

The trapping of positrons at vacancy site in some materials provide a new and sensitive method for the equilibrium determination of point defect migration enthalpy. Data are presented for commercial Al–Mg alloys and fitted to a model allowing presentation in the form of Arrhenius plots, hence the migration enthalpy [Formula: see text] can be determined by positron annihilation lifetime technique (PALT). The results show that as the concentration of Mg increases the value of [Formula: see text] increases too.





Author(s):  
M. BUDIL ◽  
E. GUERRERO ◽  
T. BRABEC ◽  
S. SELBERHERR ◽  
H. POETZL




1996 ◽  
Vol 12 (11) ◽  
pp. 904-910 ◽  
Author(s):  
R. G. Faulkner ◽  
S. -H. Song ◽  
P. E. J. Flewitt


1993 ◽  
Vol 63 (6) ◽  
pp. 800-802 ◽  
Author(s):  
Anuradha M. Agarwal ◽  
Scott T. Dunham


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