Defect chemistry and transport properties of perovskite-type oxides La1−xCaxFeO3−δ

Correlating the migration enthalpy of oxygen in perovskite-type oxides La1−xCaxFeO3−δ with the formation enthalpy of oxygen vacancies.

Oxygen diffusion in single crystal barium titanate

Oxygen isotope experiments reveal a surface space-charge layer and a migration enthalpy of oxygen vacancies of 0.7 eV.

Strain States in YSZ / RE2O3 (RE = Er, Y) Multilayers as a Function of Layer Thickness and Their Effect on Interface Conductivity and Diffusion

ABSTRACTIn this study the strain states in alternating multilayers of an extrinsic O2− ion conductor yttria stabilized zirconia (YSZ) and an insulator RE2O3 (RE = Er, Y) are investigated as a function of the layer thickness. Multilayers with narrow columnar crystallites and coherent phase boundaries were grown by pulsed laser deposition (PLD). A detailed strain analysis is performed by X-Ray Diffraction XRD, measuring distinct reflections in and perpendicular to the interface planes. Because of small columnar crystallites in the layers, the interfacial strain decays by shear with increasing distance from the interface. The extent of the strained interface regions in the YSZ layers is estimated from XRD data. By using a quantitative analytical model based on the pressure dependence of the free migration enthalpy for vacancies the results are compared to former published experimental data on O2− ion conductivity and diffusion.

THE EFFECT OF ALLOYING WITH MAGNESIUM ON THE ANNEALING BEHAVIOR OF ALUMINUM ALLOYS STUDIED BY POSITRON LIFETIME TECHNIQUE

The migration enthalpy [Formula: see text] for point defects and dislocations is estimated by using positron lifetime technique; point defects and dislocations are produced as a result of plastic deformation at room temperature (RT) for the decomposition sequence, namely 5005, 5052 and 5083, of commercial Al – Mg systems. The results show that [Formula: see text] for the three systems increases as the Mg content is increased to u1=0.34±0.09 eV, u2=0.39±0.12 eV, and u3=0.42±0.08 eV for the point defect state, and u1=1.12±0.08 eV and u2=1.37±0.13 eV for the dislocation state to 5005 and 5052, respectively. All the data are analyzed in terms of the two state trapping model.

MIGRATION ENTHALPY OF THERMAL VACANCIES BY POSITRON SPECTROSCOPY

The trapping of positrons at vacancy site in some materials provide a new and sensitive method for the equilibrium determination of point defect migration enthalpy. Data are presented for commercial Al–Mg alloys and fitted to a model allowing presentation in the form of Arrhenius plots, hence the migration enthalpy [Formula: see text] can be determined by positron annihilation lifetime technique (PALT). The results show that as the concentration of Mg increases the value of [Formula: see text] increases too.

Ic Compatible Processing of Si:Er for Optoelectronics

We have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er3Si5 is the most stable silicid formed; and it can be oxidized into Er2O3 at high temperature under any oxidizing conditions. Among Er compounds, Er2O3 luminesces and Er3Si5 and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) ∼ 10−12cm2/s at 1300 C and ∼ 10−15cm2/s at 900 C, and a migration enthalpy of ΔHm(Er) ∼ 4.6 eV. The equilibrium solubility of Er in Si is in the range of 1016 cm−3 at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.

Ic Compatible Processing of Si:Er for optoelectronics

ABSTRACTWe have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er3 Si5 is the most stable silicid formed; and it can be oxidized into Er2O3 at high temperature under any oxidizing conditions. Among Er compounds, Er2O3 luminesces and Er3Si5 and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) ∼ 10−12cm2/s at 1300 C and ∼ 10−15cm2/s at 900 C, and a migration enthalpy of δHm(Er) ∼ 4.6 eV. The equilibrium solubility of Er in Si is in the range of 1016 cm−3 at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.