A NEW MODEL FOR THE DETERMINATION OF POINT DEFECT EQUILIBRIUM CONCENTRATIONS IN SILICON
1987 ◽
Vol 6
(1)
◽
pp. 37-44
◽
1988 ◽
Vol 53
(6)
◽
pp. 1172-1180
1994 ◽
Vol 57
(3)
◽
pp. 385-393
◽
2014 ◽
Vol 49
(2)
◽
pp. 43-49
◽
1999 ◽
Vol 48
(4)
◽
pp. 323-332
◽
Keyword(s):
Keyword(s):