Ab initio calculations of the reaction pathways for methane decomposition over the Cu (111) surface

2011 ◽  
Vol 135 (6) ◽  
pp. 064707 ◽  
Author(s):  
Grzegorz Gajewski ◽  
Chun-Wei Pao
1998 ◽  
Vol 507 ◽  
Author(s):  
G. Lucovsky ◽  
H. Yang

ABSTRACTThis paper proposes intrinsic reaction pathways for generation of metastable defects in hydrogenated undoped or intrinsic amorphous silicon (i-a-Si:H). Since these pathways involve only silicon (Si) and hydrogen (H) atoms, this approach is valid for device grade materials in which concentrations of oxygen (0) atoms, and nitrogen-hydrogen (N-H) groups are present at concentrations below about 1019 cm−3. Ab initio calculations demonstrate that the proposed generation pathway reactions are exothermic with relatively small reaction barriers (< 0.4 eV).


2020 ◽  
Vol 22 (41) ◽  
pp. 23908-23919
Author(s):  
Milica Feldt ◽  
Carlos Martín-Fernández ◽  
Jeremy N. Harvey

We use a variety of computational methods to characterize and compare the hydrogen atom transfer (HAT) and epoxidation reaction pathways for oxidation of cyclohexene by an iron(iv)-oxo complex.


2019 ◽  
Vol 7 (21) ◽  
pp. 13060-13070 ◽  
Author(s):  
Heetaek Park ◽  
Minkyung Kim ◽  
ShinYoung Kang ◽  
Byoungwoo Kang

Asymmetric redox reaction pathways in LiVPO4F can be understood by a presence of oxygen defects in fluorine sites.


2011 ◽  
Vol 510 (4-6) ◽  
pp. 197-201 ◽  
Author(s):  
Jasmine D. Crenshaw ◽  
Simon R. Phillpot ◽  
Nedialka Iordanova ◽  
Susan B. Sinnott

1997 ◽  
Vol 90 (3) ◽  
pp. 495-497
Author(s):  
CLAUDIO ESPOSTI ◽  
FILIPPO TAMASSIA ◽  
CRISTINA PUZZARINI ◽  
RICCARDO TARRONI ◽  
ZDENEK ZELINGER

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