Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs

1998 ◽  
Vol 83 (3) ◽  
pp. 1403-1409 ◽  
Author(s):  
N. C. Chen ◽  
P. Y. Wang ◽  
J. F. Chen
Keyword(s):  
Low Temperature ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

scholarly journals Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band

1990 ◽  
Vol 57 (15) ◽  
pp. 1537-1539 ◽  
Author(s):  
H. Yamamoto ◽  
Z‐Q. Fang ◽  
D. C. Look
Keyword(s):  
Low Temperature ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Deep Donor

The effect of substrate orientation on the properties of low temperature molecular beam epitaxial GaAs

1997 ◽  
Vol 82 (5) ◽  
pp. 2400-2404 ◽  
Author(s):  
S. O’Hagan ◽  
M. Missous
Keyword(s):  
Low Temperature ◽  
Molecular Beam ◽  
Substrate Orientation ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Electron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs Layers

1992 ◽  
Vol 83-87 ◽  
pp. 1051-1056 ◽  
Author(s):  
Hans Jürgen von Bardeleben ◽  
Y.Q Jia ◽  
M.O. Manasreh ◽  
K.R. Evans ◽  
C.E. Stutz
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Low Temperature ◽  
Molecular Beam ◽  
Paramagnetic Resonance ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Electron Paramagnetic

Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
M. O. Manasreh ◽  
K. R. Evans ◽  
C. E. Stutz ◽  
D. C Look ◽  
J. Hemsky
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Infrared Absorption ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Vibrational Mode ◽  
The Other ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Absorption Technique

ABSTRACTThe localized vibrational mode (LVM) of silicon donor (SiGa) in molecular beam epitaxial GaAs layers grown at various temperatures is studied using the infrared absorption technique. It is found that the total integrated absorption of this LVM is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si in GaAs layers grown at ∼200 °C. On the other hand, an almost complete substitutional incorporation is obtained in GaAs layers grown at temperatures higher that 350 °C. Thermal annealing does not cause any recovery of the SiGa LVMs in present GaAs layers grown at ∼200°C.

Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs

1997 ◽  
Vol 71 (8) ◽  
pp. 1118-1120 ◽  
Author(s):  
P. Kordoš ◽  
M. Marso ◽  
A. Förster ◽  
J. Darmo ◽  
J. Betko ◽  
...  
Keyword(s):  
Low Temperature ◽  
Space Charge ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial
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