Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs

ABSTRACTThe localized vibrational mode (LVM) of silicon donor (SiGa) in molecular beam epitaxial GaAs layers grown at various temperatures is studied using the infrared absorption technique. It is found that the total integrated absorption of this LVM is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si in GaAs layers grown at ∼200 °C. On the other hand, an almost complete substitutional incorporation is obtained in GaAs layers grown at temperatures higher that 350 °C. Thermal annealing does not cause any recovery of the SiGa LVMs in present GaAs layers grown at ∼200°C.