scholarly journals Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band

1990 ◽  
Vol 57 (15) ◽  
pp. 1537-1539 ◽  
Author(s):  
H. Yamamoto ◽  
Z‐Q. Fang ◽  
D. C. Look
1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  

1991 ◽  
Vol 241 ◽  
Author(s):  
M. O. Manasreh ◽  
K. R. Evans ◽  
C. E. Stutz ◽  
D. C Look ◽  
J. Hemsky

ABSTRACTThe localized vibrational mode (LVM) of silicon donor (SiGa) in molecular beam epitaxial GaAs layers grown at various temperatures is studied using the infrared absorption technique. It is found that the total integrated absorption of this LVM is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si in GaAs layers grown at ∼200 °C. On the other hand, an almost complete substitutional incorporation is obtained in GaAs layers grown at temperatures higher that 350 °C. Thermal annealing does not cause any recovery of the SiGa LVMs in present GaAs layers grown at ∼200°C.


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