LoGHeD: An effective approach for negative differential resistance effect suppression in negative capacitance transistors

A negative capacitance transistor (NCFET) with fully depleted silicon-on-insulator (FDSOI) technology (NC-FDSOI) is one of the promising candidates for next-generation low-power devices. However, it suffers from the inherent negative differential resistance (NDR) effect, which is very detrimental to device and circuit designs. Aiming at overcoming this shortcoming, this paper proposes for the first time to use local Gaussian heavy doping technology (LoGHeD) in the channel near the drain side to suppress the NDR effect in the NC-FDSOI. The technical computer-aided design (TCAD) simulation results have validated that the output conductance (GDS) with LoGHeD, which is used to measure the NDR effect, increases compared to the conventional NC-FDSOI counterpart and approaches zero. With the increase in doping concentration, the inhibitory capability of the NDR effect shows a monotonously increasing trend. In addition, the proposed approach maintains and even enhances performances of the NC-FDSOI transistor regarding the electrical parameters, such as threshold voltage (VTH), sub-threshold swing (SS), switching current ratio (ION/IOFF), and drain-induced barrier lowering (DIBL).

Floating Gate Negative Capacitance MoS2 Phototransistor with High Photosensitivity

Monolayer MoS2 exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving...

Negative capacitance devices: sensitivity analyses of the developed TCAD ferroelectric model for HZO

This work aims to investigate the suitability of innovative negative capacitance (NC) devices to be used in High Energy Physics experiments detection systems, featuring self-amplified, segmented, high granularity detectors. Within this framework, MFM (Metal-Ferroelectric-Metal) and MFIM (Metal-Ferroelectric-Insulator-Metal) structures have been investigated within the Technology-CAD environment. The strength of this approach is to exploit the behavior of a simple capacitor to accurately ad-hoc customize the TCAD library aiming at realistically modeling the polarization properties of devices fabricated with ferroelectric materials. The comparison between simulations and measurements in terms of polarization as a function of the applied electric field for both MFM and MFIM devices has been used for modeling and methodologies validation purposes. The analyses and results obtained for MFIM capacitors can be straightforwardly extended to the study of NC-FETs. This work would support the use of the TCAD modeling approach as a predictive tool to optimize the design and the operation of the new generation NC-FET devices for the future High Energy Physics experiments in the HL-LHC scenario. The NC working principle will be employed for particle detection applications in order to exceed the limits imposed by current CMOS technology in terms of power consumption, signal detectability and switching speed.