epitaxial gaas
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2021 ◽  
Vol 129 (9) ◽  
pp. 095701
Author(s):  
Hua-Wei Hsu ◽  
Vanessa Sih


Author(s):  
Chandreswar Mahata ◽  
Siddhartha Ghosh ◽  
Sandipan Chakraborty ◽  
Laxmi Narayana Patro ◽  
Anjana Tripathi ◽  
...  


2021 ◽  
Vol 537 ◽  
pp. 147985
Author(s):  
P.V. Seredin ◽  
D.L. Goloshchapov ◽  
I.N. Arsentyev ◽  
D.N. Nikolayev ◽  
N.A. Pikhtin ◽  
...  


2021 ◽  
Vol 55 (1) ◽  
pp. 122-131
Author(s):  
P. V. Seredin ◽  
D. L. Goloshchapov ◽  
Yu. Yu. Khudyakov ◽  
I. N. Arsentyev ◽  
D. N. Nikolaev ◽  
...  


2020 ◽  
Vol 1014 ◽  
pp. 43-51
Author(s):  
Wei Wang ◽  
Ben Ma ◽  
Han Chao Gao ◽  
Hai Long Yu ◽  
Zhong Hui Li

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm.



2019 ◽  
Vol 10 (1) ◽  
pp. 170 ◽  
Author(s):  
Yuming Wei ◽  
Tianming Zhao ◽  
Beimeng Yao ◽  
Rongbin Su ◽  
Ying Yu ◽  
...  


2019 ◽  
Vol 21 (9) ◽  
Author(s):  
Jaya Lohani ◽  
Sushma Yadav ◽  
Renu Tyagi ◽  
Sameer Sapra


2019 ◽  
Vol 19 (9) ◽  
pp. 5314-5319 ◽  
Author(s):  
Han Gao ◽  
Qiang Sun ◽  
Mykhaylo Lysevych ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
...  




Author(s):  
Nobuaki Kojima ◽  
Yu-Cian Wang ◽  
Kei Kawakatsu ◽  
Akio Yamamoto ◽  
Yoshio Ohshita ◽  
...  


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