Low-frequency noise gain and photocurrent gain in quantum well infrared photodetectors

1999 ◽  
Vol 86 (11) ◽  
pp. 6580-6585 ◽  
Author(s):  
M. Ershov ◽  
H. C. Liu
Cryogenics ◽  
1990 ◽  
Vol 30 (12) ◽  
pp. 1140-1145 ◽  
Author(s):  
X.M. Li ◽  
M.J. Deen ◽  
S.P. Stapleton ◽  
R.H.S. Hardy ◽  
O. Berolo

2020 ◽  
Vol 28 (16) ◽  
pp. 23660
Author(s):  
Liqi Zhu ◽  
Zhuo Deng ◽  
Jian Huang ◽  
Huijun Guo ◽  
Lu Chen ◽  
...  

2015 ◽  
Vol 9 (6) ◽  
pp. 756-761 ◽  
Author(s):  
V. G. Litvinov ◽  
A. V. Ermachikhin ◽  
N. B. Rybin ◽  
N. V. Vishnyakov ◽  
S. P. Vikhrov

2009 ◽  
Vol 1195 ◽  
Author(s):  
Leung Ka Kuen ◽  
W.K. Patrick Fong ◽  
Paddy Kwok Leung Chan ◽  
Charles Surya

AbstractWe investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed.


1993 ◽  
Vol 3 (9) ◽  
pp. 1739-1749 ◽  
Author(s):  
B. Orsal ◽  
J. M. Peransin ◽  
P. Signoret ◽  
K. Daulasim

1991 ◽  
Vol 15 (1-4) ◽  
pp. 19-22 ◽  
Author(s):  
J. Chang ◽  
D.K. Nayak ◽  
V.K. Raman ◽  
J.C.S. Woo ◽  
J.S. Park ◽  
...  

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