Modeling And Characterization of Carrier Mobility For Truncated Conical Quantum Dot Infrared Photodetectors

In the present paper, a full theoretical model for calculating the carrier mobility coming as a result of the existence of a truncated conical quantum dots of n-type quantum dot infrared photodetectors (QDIPs) is developed. This model is built on solving Boltzmann’s transport equation that is a complex integro-differential equation describing the carrier transport. The time-domain finite-difference method is used in this numerical solution. The influences of dimensions and density of the QDs for this structure on the carrier mobility are studied. Eventually, the calculated mobility for truncated conical InAs/GaAs QDIP is contrasted to other conical, spherical, and hemispherical QD structures. The model put forward is a generic model that is applicable to various structures of truncated conical QDs devices.