High pressure study of B12As2: Electrical transport behavior and the role of grain boundaries

2015 ◽  
Vol 117 (4) ◽  
pp. 045302 ◽  
Author(s):  
Qinglin Wang ◽  
Cailong Liu ◽  
Boheng Ma ◽  
Yang Gao ◽  
Matthew Fitzpatrick ◽  
...  
1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.


2010 ◽  
Vol 132 (11) ◽  
pp. 114505 ◽  
Author(s):  
V. Venkatramu ◽  
P. Babu ◽  
I. R. Martín ◽  
V. Lavín ◽  
Juan E. Muñoz-Santiuste ◽  
...  

2017 ◽  
Vol 26 (4) ◽  
pp. 046401 ◽  
Author(s):  
Xiao-Yan Cui ◽  
Ting-Jing Hu ◽  
Jing-Shu Wang ◽  
Jun-Kai Zhang ◽  
Xue-Fei Li ◽  
...  

2012 ◽  
Vol 111 (6) ◽  
pp. 063718 ◽  
Author(s):  
Dongmei Zhang ◽  
Yongsheng Zhang ◽  
Yang Gao ◽  
Yonghao Han ◽  
Chunxiao Gao ◽  
...  

2018 ◽  
Vol 730 ◽  
pp. 1-6 ◽  
Author(s):  
Tianru Qin ◽  
Qinglin Wang ◽  
Donghui Yue ◽  
Wenshu Shen ◽  
Yalan Yan ◽  
...  

2003 ◽  
Vol 235 (2) ◽  
pp. 232-237 ◽  
Author(s):  
Ch. Consejo ◽  
L. Konczewicz ◽  
S. Contreras ◽  
B. Jouault ◽  
S. Łepkowsky ◽  
...  

2012 ◽  
Vol 116 (8) ◽  
pp. 5209-5214 ◽  
Author(s):  
Yuqiang Li ◽  
Yang Gao ◽  
Yonghao Han ◽  
Qinglin Wang ◽  
Yan Li ◽  
...  

2014 ◽  
Vol 34 (4) ◽  
pp. 355-364 ◽  
Author(s):  
Qinglin Wang ◽  
Haiwa Zhang ◽  
Yan Zhang ◽  
Cailong Liu ◽  
Yonghao Han ◽  
...  

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