High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures
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ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.
1995 ◽
Vol 65-66
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pp. 237-244
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1998 ◽
Vol 7
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pp. 715-717
2010 ◽
Vol 132
(11)
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pp. 114505
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1984 ◽
Vol 109
(2-4)
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pp. 99-106
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1985 ◽
Vol 83
(11)
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pp. 5810-5821
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