High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

1997 ◽  
Vol 70 (4) ◽  
pp. 414-416 ◽  
Author(s):  
M. Ershov ◽  
H. C. Liu ◽  
M. Buchanan ◽  
Z. R. Wasilewski ◽  
V. Ryzhii

2014 ◽  
Vol 89 (9) ◽  
Author(s):  
Peiwen Gao ◽  
Rong Yu ◽  
Liling Sun ◽  
Hangdong Wang ◽  
Zhen Wang ◽  
...  

2015 ◽  
Vol 117 (4) ◽  
pp. 045302 ◽  
Author(s):  
Qinglin Wang ◽  
Cailong Liu ◽  
Boheng Ma ◽  
Yang Gao ◽  
Matthew Fitzpatrick ◽  
...  

1998 ◽  
Vol 7 ◽  
pp. 715-717
Author(s):  
Toshihiko Kobayashi ◽  
Kazuya Takashsma ◽  
Kazuo Uchida

2010 ◽  
Vol 132 (11) ◽  
pp. 114505 ◽  
Author(s):  
V. Venkatramu ◽  
P. Babu ◽  
I. R. Martín ◽  
V. Lavín ◽  
Juan E. Muñoz-Santiuste ◽  
...  

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