Effect of γ-ray irradiation on optical properties of erbium doped bismuth-tellurite glasses

Author(s):  
Keshavamurthy K. ◽  
B. Eraiah
2016 ◽  
Vol 22 (1) ◽  
pp. 136-140
Author(s):  
. K. Keshavamurthy ◽  
. B. Eraiah

2016 ◽  
Vol 864 ◽  
pp. 37-41 ◽  
Author(s):  
Mukhayyarotin Niswati Rodliyatul Jauhariyah ◽  
Cari ◽  
Ahmad Marzuki

This paper presents the optical properties of erbium doped tellurite glasses with the composition of 55TeO2-2Bi2O3-35ZnO-5PbO-(3-x)Na2O-xEr2O3 where x = 0, 0.5, 1.0, 1.5, 2.0, 2.5, and 3.0 mol% . Refractive index of the glasses was measured using Brewster’s angle method and their optical absorption spectra were measured in spectral range 200 – 1100 nm recorded at room temperature. The results show that the glass refractive index increases with the increase of Er3+ ion content in the glass and the optical band gap energy decreases with the increase of erbium content in the glass.


2014 ◽  
Vol 12 (1-2) ◽  
pp. 76-79 ◽  
Author(s):  
Yongtao Zhou ◽  
Stefania Baccaro ◽  
Alessia Cemmi ◽  
Yunxia Yang ◽  
Guorong Chen

2016 ◽  
Vol 15 (1) ◽  
pp. 17-27
Author(s):  
B Eraiah

The glasses with the composition of xEr 2 O 3 -5AgCl- 15MoO 3 -(80-x) TeO 2 (x = 0, 0.5 and 1 mol%, named as SMT0, SMT1 and SMT2, respectively) were synthesized using conventional melt quenching method and their optical properties were investigated through UV-Visible spectrophotometer. Density and molar volume values of the glass samples were estimated, their values were found in the range from 5.52 to 5.64 g/cm 3 and 27.737 to 28.689 cm 3 , respectively. The UV absorption spectra were recorded at room temperature in the wavelength range 200-1100nm. From the absorption edge data, it is found that both the direct and indirect type transitions may takeplace. The direct and indirect band gap values are ranging from 1.92 to 2.29 eV and 1.24 to 1.77 eV, respectively. Also, the Urbach energy (E tail ) values were determined and their values are ranging from 0.33 to 0.54 eV. These obtained E tail values are well matched with amorphous semiconductors (0.046 to 0.66 eV).


2013 ◽  
Vol 168 (9) ◽  
pp. 696-704
Author(s):  
Hea-Yeon Kim ◽  
Younes Hanifehpour ◽  
Arghya Narayan Banerjee ◽  
Bong-Ki Min ◽  
Sang Woo Joo ◽  
...  

2012 ◽  
Vol 249 (11) ◽  
pp. 2213-2221 ◽  
Author(s):  
M. Hamzaoui ◽  
M. T. Soltani ◽  
M. Baazouzi ◽  
B. Tioua ◽  
Z. G. Ivanova ◽  
...  

2010 ◽  
Vol 130 (12) ◽  
pp. 2394-2401 ◽  
Author(s):  
I. Jlassi ◽  
H. Elhouichet ◽  
M. Ferid ◽  
C. Barthou

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