Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces

2020 ◽  
Vol 117 (21) ◽  
pp. 213104
Author(s):  
Thushan E. Wickramasinghe ◽  
Gregory Jensen ◽  
Ruhi Thorat ◽  
Miles Lindquist ◽  
Shrouq H. Aleithan ◽  
...  
1999 ◽  
Vol 586 ◽  
Author(s):  
M. Backhaus-Ricoult

ABSTRACTTransition metal-oxide interfaces suffer within their thermodynamic stability range Gibbs' adsorption and show important changes in chemical composition with oxygen activity. As a consequence, specific free interfacial energy and adhesion energy also vary with oxygen activity. Adhesion at a given non-reactive transition metal-oxide interface can then be optimised by establishing the proper oxygen activity during processing or by a post-treatment at the interface.In the present work, the approach of Gibbs' adsorption is extended to crystalline, anisotropic (special) transition metal-oxide interfaces. It is demonstrated that interfacial energy varies with oxygen activity. The variation in energy is studied for different adsorption energies, temperatures and interfacial planes.


2015 ◽  
Vol 142 (10) ◽  
pp. 101918 ◽  
Author(s):  
Mathias Glaser ◽  
Heiko Peisert ◽  
Hilmar Adler ◽  
Umut Aygül ◽  
Milutin Ivanovic ◽  
...  

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