scholarly journals Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance

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Hydrostatic pressure reduces the band gap and increases the ZT value of SnS2.


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Vol 54 ◽  
pp. 287-292 ◽  
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Meng-Xue Zeng ◽  
Ren-Nian Wang ◽  
Zhou-Sheng Mo ◽  
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