Structural, electrical, and luminescence properties of (0001) ZnO epitaxial layers grown on c-GaN/sapphire templates by pulsed laser deposition technique

Correction for ‘Synthesis and up/down conversion luminescence properties of Na0.5R0.5MoO4:Ln3+ (R3+ = La, Gd), (Ln3+ = Eu, Tb, Dy, Yb/Er) thin phosphor films grown by pulsed laser deposition technique’ by Rajagopalan Krishnan et al., RSC Adv., 2014, 4, 64258–64266.

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Optical properties of nanostructured ZnO prepared by a pulsed laser deposition technique

Materials Letters ◽

10.1016/j.matlet.2014.06.047 ◽

2014 ◽

Vol 132 ◽

pp. 31-33 ◽

Cited By ~ 22

Author(s):

Raied K. Jamal ◽

Mohammed A. Hameed ◽

Kadhim A. Adem

Keyword(s):

Optical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique

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Structural tuning on TiO2 quantum well nanostructures using pulsed laser deposition technique

10.1063/5.0058209 ◽

2021 ◽

Author(s):

S. Sankar

Keyword(s):

Quantum Well ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique

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Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

MRS Proceedings ◽

10.1557/proc-574-11 ◽

1999 ◽

Vol 574 ◽

Author(s):

D. Kumar ◽

K. G. Cho ◽

Zhang Chen ◽

V. Craciun ◽

P. H. Holloway ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Yttrium Oxide ◽

Lattice Mismatch ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

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Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.375 ◽

2010 ◽

Vol 123-125 ◽

pp. 375-378 ◽

Cited By ~ 3

Author(s):

Ram Prakash ◽

Shalendra Kumar ◽

Chan Gyu Lee ◽

S.K. Sharma ◽

Marcelo Knobel ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Fe Doping ◽

Full Width ◽

Deposition Technique ◽

X Ray Diffraction ◽

X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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