Transient analysis of long-channel MOS devices using the finite-element method

1984 ◽  
Vol 56 (4) ◽  
pp. 547-553
Author(s):  
S. BANERJEE ◽  
M. BALABRAHMANANDAM ◽  
N. B. CHAKRABARTI
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Transient Analysis ◽  
The Finite Element Method ◽  
Mos Devices ◽  
Long Channel ◽  
Element Method

Simulation of tuning graphene plasmonic behaviors by ferroelectric domains for self-driven infrared photodetector applications

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20868-20875 ◽  
Author(s):  
Junxiong Guo ◽  
Yu Liu ◽  
Yuan Lin ◽  
Yu Tian ◽  
Jinxing Zhang ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Interfacial Effect ◽  
Infrared Photodetector ◽  
The Finite Element Method ◽  
Ferroelectric Domains ◽  
Element Method

We propose a graphene plasmonic infrared photodetector tuned by ferroelectric domains and investigate the interfacial effect using the finite element method.

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