ION-EXCHANGE SELECTIVITY FOR ALKALI METAL IONS ON A CRYPTOMELANE-TYPE HYDROUS MANGANESE DIOXIDE

1993 ◽  
Vol 11 (1) ◽  
pp. 143-158 ◽  
Author(s):  
Masamichi Tsuji ◽  
Sridhar Komarneni ◽  
Mitsuo Abe;
1967 ◽  
Vol 2 (5) ◽  
pp. 691-695 ◽  
Author(s):  
Joseph Sherma ◽  
David A. Goldstein ◽  
James P. Gutai

2003 ◽  
Vol 14 (Supplement) ◽  
pp. 169-172 ◽  
Author(s):  
Noriko SUZUKI ◽  
Mami ITOH ◽  
Megumi IGARASHI ◽  
Yasushi KANZAKI ◽  
Yu KOMATSU

2007 ◽  
Vol 22 (9) ◽  
pp. 2437-2447 ◽  
Author(s):  
Zong-Huai Liu ◽  
Liping Kang ◽  
Mingzhu Zhao ◽  
Kenta Ooi

Cs-type layered manganese oxide with a novel hexagonal-like morphology (Cs–BirMO) was prepared by a solid-state reaction procedure. The Cs+ extraction and alkali–metal ion insertion reactions were investigated by chemical analyses, x-ray analyses, scanning electron microscopy observation, Fourier transform-infrared spectroscopy, thermogravimetric differential thermal analyses, pH titration, and distribution coefficient (Kd) measurements. A considerable percentage (88%) of Cs+ ions in the interlayer sites were topotactically extracted by acid treatment, accompanied by a slight change of the lattice parameters. Alkali–metal ions could be inserted into the interlayer of the acid-treated sample (H–BirMO), mainly by an ion-exchange mechanism. The pH titration curve of the H–BirMO sample showed a simple monobasic acid toward Li+, Rb+, and Cs+ ions, and dibasic acid behavior toward Na+ and K+ ions. The order of the apparent capacity was K+ > Li+ ≈ Na+ ≈ Rb+ ≈ Cs+ at pH < 6. The Kd study showed the selectivity sequence of K+ > Rb+ > Na+ > Li+ for alkali–metal ions at the range of pH <5; H–BirMO sample showed markedly high selectivity for the adsorption of K+ ions. Preliminary investigations of the electrochemical properties of the Li+-inserted sample Li–BirMO(1M, 6d) showed that the obtained samples had a relatively high discharge capacity of 115 mAh g−1 and excellent layered stability.


1978 ◽  
Vol 40 (3) ◽  
pp. 545-547 ◽  
Author(s):  
J.P. Gupta ◽  
D.V. Nowell ◽  
M. Qureshi ◽  
A.P. Gupta

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