Low-energy limit corrections to the electronic stopping power equation for ions

1990 ◽  
Vol 114 (1-2) ◽  
pp. 133-135 ◽  
Author(s):  
N. Öuztüurk ◽  
A. J. Antolak ◽  
W. Williamson
Keyword(s):  
Low Energy ◽  
Stopping Power ◽  
Energy Limit ◽  
Power Equation ◽  
Electronic Stopping Power

scholarly journals Energy loss and effective charge of low-energy oxygen ions in partially ionized plasma

2000 ◽  
Vol 18 (4) ◽  
pp. 639-646
Author(s):  
K. NISHIGORI ◽  
U. NEUNER ◽  
M. TAKIZAWA ◽  
M. KOJIMA ◽  
T. SAGAMI ◽  
...  
Keyword(s):  
Energy Loss ◽  
Charge Distribution ◽  
Effective Charge ◽  
Low Energy ◽  
Stopping Power ◽  
Oxygen Ions ◽  
Power Equation ◽  
Slow Ions ◽  
Partially Ionized ◽  
Peak Value

This article reports on the interaction between slow ions and a partially ionized plasma. Temporal evolutions of energy loss and charge distribution of 2.4 MeV oxygen beams in the laser-induced polyethylene plasma were measured. The charge distribution showed strong stripping ability in the early phase of the plasma. Stopping power deduced from the experimental energy loss was 1.9 times larger than that for the solid. The effective charge of the projectile ion was estimated from the yields of 4+ and 6+ states. The peak value of the effective charge was 1.4 times larger than that of the solid. The stopping power equation given by Sigmund was extended for the partially ionized plasma and it could reproduce the measured energy loss.

Electronic Stopping Power for Low Energy Ions

1985 ◽  
Vol 45 ◽  
Author(s):  
N. Azziz ◽  
K. W. Brannon ◽  
G. R. Srinivasan
Keyword(s):  
Effective Charge ◽  
Density Functional ◽  
Considerable Effect ◽  
Low Energy ◽  
Stopping Power ◽  
Target Electron ◽  
Functional Formalism ◽  
Low Energy Ions ◽  
Electronic Stopping Power

ABSTRACTA procedure to be used in ion implantation calculations has been developed to determine the stopping power of an ion at low energy as a function of its effective charge. The ion effective charge accounts for screening of the ion and has been found to have considerable effect on the stopping power through its dependence on the target electron density. Steps in the procedure include: the calculation of the Fermi momentum of the target, calculation of the relative velocity between the projectile and target electron cloud, determination of the screening distance for the ion, and calculation of the proton stopping power Sp according to the density-functional formalism. The ion stopping power is then is the ion effective charge. The procedure can be applied to semiconductors and metals. Comparisons are reported with the predictions of the Firsov and Lindhard methods which do not include any effective charge or shell structure considerations. The computer program MARLOWE has been modified to include this method for calculating the stopping power. Results in the form of implanted boron profiles in silicon will be presented.

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