Theoretical study of the channeling effect in the electronic stopping power of silicon carbide nanocrystal for low-energy protons and helium ions

Author(s):  
Fei Mao ◽  
Chao Zhang ◽  
Feng-Shou Zhang
2019 ◽  
Vol 27 (2) ◽  
pp. 170-177
Author(s):  
Roaa Salam Kadhum Al- Hasnawei

         In this research, a theoretical study was made to calculate electronic stopping power for heavy charged particles (Protons, Alpha particles, Heavy ions (C,O)) which interact with atomic targets (H,C,O,Si) by using the equation which resulting from distant and close collisions ,as it has been calculating the effect of  atomic number (Z1) for projectiles and the effect of  atomic number (Z2) for targets on the electronic stopping power in range velocities (v=vo,2vo,5vo,10vo).              Mathematical approximative methods are used in the calculation and some of the equation programmed by Matlab language to obtain the theoretical result which is shown in the graphic.


1985 ◽  
Vol 45 ◽  
Author(s):  
N. Azziz ◽  
K. W. Brannon ◽  
G. R. Srinivasan

ABSTRACTA procedure to be used in ion implantation calculations has been developed to determine the stopping power of an ion at low energy as a function of its effective charge. The ion effective charge accounts for screening of the ion and has been found to have considerable effect on the stopping power through its dependence on the target electron density. Steps in the procedure include: the calculation of the Fermi momentum of the target, calculation of the relative velocity between the projectile and target electron cloud, determination of the screening distance for the ion, and calculation of the proton stopping power Sp according to the density-functional formalism. The ion stopping power is then is the ion effective charge. The procedure can be applied to semiconductors and metals. Comparisons are reported with the predictions of the Firsov and Lindhard methods which do not include any effective charge or shell structure considerations. The computer program MARLOWE has been modified to include this method for calculating the stopping power. Results in the form of implanted boron profiles in silicon will be presented.


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